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| PSMN1R6-30PL127 Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel 30 V 1.7 mΩ logic level MOSFET | |||
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NXP Semiconductors
PSMN1R6-30PL
N-channel 30 V 1.7 m⦠logic level MOSFET
6. Characteristics
Table 6. Characteristics
Tested to JEDEC standards where applicable.
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
V(BR)DSS
VGS(th)
drain-source
breakdown voltage
gate-source threshold
voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C; see
Figure 11; see Figure 12
30
-
-
V
27
-
-
V
1.3 1.7 2.15 V
ID = 1 mA; VDS = VGS; Tj = 175 °C; see
Figure 12
0.5 -
-
V
ID = 1 mA; VDS = VGS; Tj = -55 °C; see
Figure 12
-
-
2.45 V
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 125 °C
VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 25 A; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 100 °C; see
Figure 13
-
-
5
µA
-
-
150 µA
-
-
100 nA
-
-
100 nA
-
1.6 2.1 mâ¦
-
-
2.3 mâ¦
RG
gate resistance
Dynamic characteristics
VGS = 10 V; ID = 25 A; Tj = 25 °C;
f = 1 MHz
[1] -
-
1.4 1.7 mâ¦
0.98 -
â¦
QG(tot)
total gate charge
ID = 25 A; VDS = 15 V; VGS = 10 V; see
Figure 14; see Figure 15
-
212 -
nC
ID = 0 A; VDS = 0 V; VGS = 10 V
ID = 25 A; VDS = 15 V; VGS = 4.5 V; see
Figure 14
-
193 -
nC
-
101 -
nC
QGS
gate-source charge
ID = 25 A; VDS = 15 V; VGS = 4.5 V; see
Figure 14; see Figure 15
-
33
-
nC
QGS(th)
pre-threshold
gate-source charge
ID = 25 A; VDS = 15 V; VGS = 4.5 V; see
Figure 14
-
20
-
nC
QGS(th-pl) post-threshold
gate-source charge
-
13
-
nC
QGD
gate-drain charge
ID = 25 A; VDS = 15 V; VGS = 4.5 V; see
Figure 14; see Figure 15
-
27
-
nC
VGS(pl)
gate-source plateau
voltage
VDS = 15 V; see Figure 14
-
2.5 -
V
Ciss
input capacitance
VDS = 12 V; VGS = 0 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; see Figure 16
Crss
reverse transfer
capacitance
-
12493 -
pF
-
2486 -
pF
-
1034 -
pF
PSMN1R6-30PL_2
Product data sheet
Rev. 02 â 25 June 2009
© NXP B.V. 2009. All rights reserved.
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