PSMN063-150D Datasheet, PDF (8/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

NXP Semiconductors
PSMN063-150D
N-channel TrenchMOS SiliconMAX standard level FET
10⁴
P
(pF)
10³
10²
C_iss
C_oss
C_rss
003aaa154
30
I_S
(A)
20
10
003aaa156
T_j = 175 °C
T_j = 25 °C
10
10^−1
1
10
10²
V_DS (V)
0
0
0.4
0.8
1.2
V_SD (V)
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 14. Source current as a function of source-drain
voltage; typical values
PSMN063-150D_4
Product data sheet
Rev. 04 — 17 December 2009
© NXP B.V. 2009. All rights reserved.
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