PSMN063-150D Datasheet, PDF (7/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

NXP Semiconductors
PSMN063-150D
N-channel TrenchMOS SiliconMAX standard level FET
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
max
typ
min
03aa32
60
120
180
T_j (°C)
0.20
R_DSon
4.4 _{4.6 4.8}
(Ω)
5.0
0.16
5.2
0.12
5.4
003aaa151
0.08
6
0.04
V_GS (V) = 8 10
0
0
5
10
15
20
25
30
I_D (A)
Fig 9. Gate-source threshold voltage as a function of Fig 10. Drain-source on-state resistance as a function
junction temperature
of drain current; typical values
3
03aa30
12
003aaa155
a
V_GS
(V)
V_DD = 30 V
2
8
V_DD = 120 V
1
4
0
-60
0
60
120
180
T_j (°C)
0
0
20
40
60
Q_G (nC)
Fig 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 12. Gate-source voltage as a function of gate
charge; typical values
PSMN063-150D_4
Product data sheet
Rev. 04 — 17 December 2009
© NXP B.V. 2009. All rights reserved.
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