PSMN063-150D Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

PSMN063-150D
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 04 — 17 December 2009
Product data sheet
1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Higher operating power due to low
thermal resistance
„ Low conduction losses due to low
on-state resistance
„ Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
„ DC-to-DC convertors
„ Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
T_mb = 25 °C; V_GS = 10 V;
see Figure 1 and 3
-
-
150 V
-
-
29 A
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
-
-
150 W
Static characteristics
R_DSon drain-source
V_GS = 10 V; I_D = 15 A;
-
on-state resistance T_j = 25 °C; see Figure 10 and 11
60 63 mΩ