English
Language : 

PSMN063-150D Datasheet, PDF (4/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor
◁
NXP Semiconductors
PSMN063-150D
N-channel TrenchMOS SiliconMAX standard level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Conditions
see Figure 4
vertical in still air
Min Typ Max Unit
-
-
1
K/W
-
50
-
K/W
10
Zth(j-mb)
(K/W)
1
10−1
10−2
δ=
0.5
0.2
0.1
0.05
0.02
single pulse
003aaa149
P
tp
δ=
T
10−3
10−6
10−5
10−4
10−3
10−2
tp
T
10−1
tp (s)
t
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN063-150D_4
Product data sheet
Rev. 04 — 17 December 2009
© NXP B.V. 2009. All rights reserved.
4 of 12
 ▷