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| PSMN063-150D Datasheet, PDF (5/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor | |||
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NXP Semiconductors
PSMN063-150D
N-channel TrenchMOS SiliconMAX standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
133 -
-
V
150 -
-
V
VGS(th)
gate-source threshold ID = 1 mA; VDS= VGS; Tj = 175 °C; see Figure 9 1
-
voltage
ID = 1 mA; VDS= VGS; Tj = -55 °C; see Figure 9 -
-
-
V
6
V
ID = 1 mA; VDS= VGS; Tj = 25 °C; see Figure 9
2
3
4
V
IDSS
drain leakage current VDS = 150 V; VGS = 0 V; Tj = 25 °C
-
0.05 10
µA
VDS = 150 V; VGS = 0 V; Tj = 175 °C
-
-
500 µA
IGSS
gate leakage current VGS = 10 V; VDS = 0 V; Tj = 25 °C
-
0.02 100 nA
VGS = -10 V; VDS = 0 V; Tj = 25 °C
-
0.02 100 nA
RDSon
drain-source on-state VGS = 10 V; ID = 15 A; Tj = 175 °C;
resistance
see Figure 10 and 11
-
-
176 mâ¦
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 10 and 11
-
60
63
mâ¦
Dynamic characteristics
QG(tot)
total gate charge
ID = 30 A; VDS = 120 V; VGS = 10 V; Tj = 25 °C; -
55
-
nC
see Figure 12
QGS
gate-source charge
ID = 30 A; VDS = 120 V; VGS = 120 V;
Tj = 25 °C; see Figure 12
-
10
-
nC
QGD
gate-drain charge
ID = 30 A; VDS = 120 V; VGS = 10 V; Tj = 25 °C; -
20
27
nC
see Figure 12
Ciss
input capacitance
VDS = 25 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C;
-
2390 -
pF
Coss
output capacitance
see Figure 13
-
240 -
pF
Crss
reverse transfer
capacitance
-
98
-
pF
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VDS = 75 V; RL = 2.7 â¦; VGS = 10 V;
RG(ext) = 5.6 â¦; Tj = 25 °C
-
14
-
ns
-
50
-
ns
-
48
-
ns
-
38
-
ns
VSD
source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 14 -
0.9 1.2 V
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 25 V; Tj = 25 °C
-
105 -
ns
-
0.55 -
µC
PSMN063-150D_4
Product data sheet
Rev. 04 â 17 December 2009
© NXP B.V. 2009. All rights reserved.
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