PSMN063-150D Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

NXP Semiconductors
PSMN063-150D
N-channel TrenchMOS SiliconMAX standard level FET
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
10^−6
0
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min typ max
2
4
6
V_GS (V)
30
I_D
(A)
20
10
0
0
V_GS (V) = 10
8.0
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6.0
5.4
5.2
5.0
4.8
4.6
4.4
0.4
0.8
1.2
1.6
2.0
V_DS (V)
Fig 5. Sub-threshold drain current as a function of
gate-source voltage
30
I_D
(A)
20
10
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T_j = 175 °C
25 °C
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
40
g_fs
(S)
30
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T_j = 25 °C
20
T_j = 175 °C
10
0
0
2
4
6
8
V_GS (V)
0
0
10
20
30
I_D (A)
Fig 7. Transfer characteristics: drain current as a
Fig 8. Forward transconductance as a function of
function of gate-source voltage; typical values
drain current; typical values
PSMN063-150D_4
Product data sheet
Rev. 04 — 17 December 2009
© NXP B.V. 2009. All rights reserved.
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