PMBT3946VPN Datasheet, PDF (8/15 Pages) NXP Semiconductors – 40 V, 200 mA NPN/PNP switching transistor

NXP Semiconductors
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
400
h_FE
(1)
300
200
(2)
(3)
100
006aab120
−0.3
I_C
(A)
−0.2
I_B (mA) = −5.0
−4.5
−4.0
−3.5
−3.0
−0.1
006aab121
−2.5
−2.0
−1.5
−1.0
−0.5
0
−10^−1
−1
−10
−10²
−10³
I_C (mA)
V_CE = −1 V
(1) T_amb = 150 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 8. TR2 (PNP): DC current gain as a function of
collector current; typical values
−1.2
V_BE
(V)
−1.0
−0.8
006aab123
(1)
(2)
−0.6
(3)
−0.4
0
0
−2
−4
−6
−8
−10
V_CE (V)
T_amb = 25 °C
Fig 9. TR2 (PNP): Collector current as a function of
collector-emitter voltage; typical values
−1.2
V_BEsat
(V)
−1.0
−0.8
006aab124
(1)
(2)
−0.6
(3)
−0.4
−0.2
−10^−1
−1
−10
−10²
−10³
I_C (mA)
V_CE = −1 V
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 150 °C
Fig 10. TR2 (PNP): Base-emitter voltage as a function
of collector current; typical values
−0.2
−10^−1
−1
−10
−10²
−10³
I_C (mA)
I_C/I_B = 10
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 150 °C
Fig 11. TR2 (PNP): Base-emitter saturation voltage as
a function of collector current; typical values
PMBT3946VPN_1
Product data sheet
Rev. 01 — 31 August 2009
© NXP B.V. 2009. All rights reserved.
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