PMBT3946VPN Datasheet, PDF (5/15 Pages) NXP Semiconductors – 40 V, 200 mA NPN/PNP switching transistor

NXP Semiconductors
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
Table 8. Characteristics …continued
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
t_d
delay time
t_r
rise time
t_on
turn-on time
V_CC = 3 V; I_C = 10 mA;
I_Bon = 1 mA;
I_Boff = −1 mA
t_s
storage time
t_f
fall time
t_off
turn-off time
C_c
collector capacitance V_CB = 5 V; I_E = i_e = 0 A;
f = 1 MHz
C_e
emitter capacitance V_EB = 500 mV;
I_C = i_c = 0 A; f = 1 MHz
f_T
transition frequency V_CE = 20 V; I_C = 10 mA;
f = 100 MHz
NF
noise figure
V_CE = 5 V; I_C = 100 µA;
R_S = 1 kΩ;
f = 10 Hz to 15.7 kHz
TR2 (PNP)
I_CBO
collector-base cut-off V_CB = −30 V; I_E = 0 A
current
I_EBO
emitter-base cut-off V_EB = −6 V; I_C = 0 A
current
h_FE
V_CEsat
V_BEsat
t_d
t_r
t_on
t_s
t_f
t_off
C_c
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
delay time
rise time
turn-on time
storage time
V_CE = −1 V
I_C = −0.1 mA
I_C = −1 mA
I_C = −10 mA
I_C = −50 mA
I_C = −100 mA
I_C = −10 mA; I_B = −1 mA
I_C = −50 mA; I_B = −5 mA
I_C = −10 mA; I_B = −1 mA
I_C = −50 mA; I_B = −5 mA
V_CC = −3 V;
I_C = −10 mA;
I_Bon = −1 mA;
I_Boff = 1 mA
fall time
turn-off time
collector capacitance V_CB = −5 V; I_E = i_e = 0 A;
f = 1 MHz
Min Typ Max Unit
-
-
35
ns
-
-
35
ns
-
-
70
ns
-
-
200 ns
-
-
50
ns
-
-
250 ns
-
-
4
pF
-
-
8
pF
300 -
-
MHz
-
-
5
dB
-
-
−50 nA
-
-
−50 nA
60
180 -
80
180 -
100 180 300
60
130 -
30
50
-
-
−100 −250 mV
-
−165 −400 mV
-
−750 −850 mV
-
−850 −950 mV
-
-
35
ns
-
-
35
ns
-
-
70
ns
-
-
225 ns
-
-
75
ns
-
-
300 ns
-
-
4.5 pF
PMBT3946VPN_1
Product data sheet
Rev. 01 — 31 August 2009
© NXP B.V. 2009. All rights reserved.
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