PMBT3946VPN Datasheet, PDF (6/15 Pages) NXP Semiconductors – 40 V, 200 mA NPN/PNP switching transistor

NXP Semiconductors
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
Table 8. Characteristics …continued
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
C_e
emitter capacitance V_EB = −500 mV;
I_C = i_c = 0 A; f = 1 MHz
f_T
transition frequency V_CE = −20 V;
I_C = −10 mA;
f = 100 MHz
NF
noise figure
V_CE = −5 V;
I_C = −100 µA; R_S = 1 kΩ;
f = 10 Hz to 15.7 kHz
Min Typ Max Unit
-
-
10
pF
250 -
-
MHz
-
-
4
dB
600
h_FE
400
(1)
200
(2)
(3)
006aab115
0.20
I_C
(A)
0.15
0.10
0.05
I_B (mA) = 5.0
4.0
3.0
2.0
1.0
006aab116
4.5
3.5
2.5
1.5
0.5
0
10^−1
1
10
10²
10³
I_C (mA)
V_CE = 1 V
(1) T_amb = 150 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 3. TR1 (NPN): DC current gain as a function of
collector current; typical values
0.0
0
2
4
6
8
10
V_CE (V)
T_amb = 25 °C
Fig 4. TR1 (NPN): Collector current as a function of
collector-emitter voltage; typical values
PMBT3946VPN_1
Product data sheet
Rev. 01 — 31 August 2009
© NXP B.V. 2009. All rights reserved.
6 of 15