PMBT3946VPN Datasheet, PDF (7/15 Pages) NXP Semiconductors – 40 V, 200 mA NPN/PNP switching transistor

NXP Semiconductors
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
1.2
V_BE
(V)
(1)
0.8
(2)
(3)
0.4
006aab117
1.3
V_BEsat
(V)
0.9
(1)
(2)
(3)
0.5
006aab118
0
10^−1
1
10
10²
10³
I_C (mA)
0.1
10^−1
1
10
10²
10³
I_C (mA)
V_CE = 1 V
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 150 °C
Fig 5. TR1 (NPN): Base-emitter voltage as a function
of collector current; typical values
I_C/I_B = 10
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 150 °C
Fig 6. TR1 (NPN): Base-emitter saturation voltage as
a function of collector current; typical values
1
006aab119
V_CEsat
(V)
10^{−1 (2)}
(1)
(3)
10^−2
10^−1
1
10
10²
10³
I_C (mA)
I_C/I_B = 10
(1) T_amb = 150 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 7. TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values
PMBT3946VPN_1
Product data sheet
Rev. 01 — 31 August 2009
© NXP B.V. 2009. All rights reserved.
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