PMBT3946VPN Datasheet, PDF (4/15 Pages) NXP Semiconductors – 40 V, 200 mA NPN/PNP switching transistor

NXP Semiconductors
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
10³
Z_th(j-a)
(K/W)
10²
10
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aab605
1
10^−5
10^−4
10^−3
10^−2
10^−1
1
10
10²
10³
t_p (s)
Fig 2.
FR4 PCB, standard footprint
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
7. Characteristics
Table 8. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
TR1 (NPN)
I_CBO
collector-base cut-off V_CB = 30 V; I_E = 0 A
current
I_EBO
emitter-base cut-off V_EB = 6 V; I_C = 0 A
current
h_FE
V_CEsat
V_BEsat
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
V_CE = 1 V
I_C = 0.1 mA
I_C = 1 mA
I_C = 10 mA
I_C = 50 mA
I_C = 100 mA
I_C = 10 mA; I_B = 1 mA
I_C = 50 mA; I_B = 5 mA
I_C = 10 mA; I_B = 1 mA
I_C = 50 mA; I_B = 5 mA
Min Typ Max Unit
-
-
50
nA
-
-
50
nA
60
180 -
80
180 -
100 180 300
60
105 -
30
50
-
-
75
200 mV
-
120 300 mV
650 750 850 mV
-
850 950 mV
PMBT3946VPN_1
Product data sheet
Rev. 01 — 31 August 2009
© NXP B.V. 2009. All rights reserved.
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