PMBT3946VPN Datasheet, PDF (3/15 Pages) NXP Semiconductors – 40 V, 200 mA NPN/PNP switching transistor

NXP Semiconductors
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
Table 6. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per device
P_tot
T_j
T_amb
T_stg
total power dissipation
junction temperature
ambient temperature
storage temperature
T_amb ≤ 25 °C
[1][2] _-
-
−55
−65
Max Unit
360
mW
150
°C
+150 °C
+150 °C
[1] Reflow soldering is the only recommended soldering method.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
400
P_tot
(mW)
300
006aab604
200
100
0
−75
−25
25
75
125
175
T_amb (°C)
FR4 PCB, standard footprint
Fig 1. Per device: Power derating curves SOT666
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Per transistor
R_th(j-a)
thermal resistance from
junction to ambient
R_th(j-sp)
thermal resistance from
junction to solder point
Per device
R_th(j-a)
thermal resistance from
junction to ambient
Conditions
in free air
Min Typ Max Unit
[1][2] _-
-
521 K/W
-
-
100 K/W
in free air
[1][2] _-
-
347 K/W
[1] Reflow soldering is the only recommended soldering method.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PMBT3946VPN_1
Product data sheet
Rev. 01 — 31 August 2009
© NXP B.V. 2009. All rights reserved.
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