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| PHPT60410NY Datasheet, PDF (8/15 Pages) NXP Semiconductors – 40 V, 10 A NPN high power bipolar transistor | |||
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NXP Semiconductors
PHPT60410NY
40 V, 10 A NPN high power bipolar transistor
1
VCEsat
(V)
10-1
aaa-015655
(1)
(2)
(3)
1
VCEsat
(V)
10-1
(1)
(2)
10-2
(3)
(4)
aaa-014219
10-2
10-1
1
10
102
103
104
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = â55 °C
Fig. 8. Collector-emitter saturation voltage as a
function of collector current; typical values
102
RCEsat
(Ω)
10
aaa-014220
1
(1)
(2)
10-1
(3)
10-2
10-1
1
10
102
103
104
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = â55 °C
Fig. 10. Collector-emitter saturation resistance as a
function of collector current; typical values
10-3
10-1
1
10
102
103
104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 20
(4) IC/IB = 10
Fig. 9. Collector-emitter saturation voltage as a
function of collector current; typical values
103
RCEsat
(Ω)
102
aaa-014221
10
1
(1)
(2)
10-1
(3)
10-2
10-1
(4)
1
10
102
103
104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 20
(4) IC/IB = 10
Fig. 11. Collector-emitter saturation resistance as a
function of collector current; typical values
PHPT60410NY
Product data sheet
All information provided in this document is subject to legal disclaimers.
27 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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