English
Language : 

PHPT60410NY Datasheet, PDF (5/15 Pages) NXP Semiconductors – 40 V, 10 A NPN high power bipolar transistor
◁
NXP Semiconductors
PHPT60410NY
40 V, 10 A NPN high power bipolar transistor
103
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02 0.01
1
0
0.25
aaa-014225
10-1
10-5
10-4
10-3
10-2
10-1
1
FR4 PCB, standard footprint
10
102
103
tp (s)
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
102
aaa-014226
Zth(j-a)
(K/W)
10
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
1
0.01
0.25
0
10-1
10-5
10-4
10-3
10-2
10-1
1
FR4 PCB, mounting pad for collector 6 cm2
10
102
103
tp (s)
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
ICBO
collector-base cut-off VCB = 32 V; IE = 0 A; Tamb = 25 °C
current
VCB = 32 V; IE = 0 A; Tj = 150 °C
ICES
collector-emitter cut-off VCE = 32 V; VBE = 0 V; Tamb = 25 °C
current
IEBO
emitter-base cut-off
VEB = 7 V; IC = 0 A; Tamb = 25 °C
current
hFE
PHPT60410NY
DC current gain
VCE = 2 V; IC = 500 mA; Tamb = 25 °C
All information provided in this document is subject to legal disclaimers.
Product data sheet
27 January 2015
Min Typ Max Unit
-
-
100 nA
-
-
50
µA
-
-
100 nA
-
-
100 nA
230 370 -
© NXP Semiconductors N.V. 2015. All rights reserved
5 / 15
 ▷