English
Language : 

PHPT60410NY Datasheet, PDF (10/15 Pages) NXP Semiconductors – 40 V, 10 A NPN high power bipolar transistor
◁
NXP Semiconductors
PHPT60410NY
40 V, 10 A NPN high power bipolar transistor
12. Package outline
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads
SOT669
L1
HD
E
A
A2
C
b2
c2
E1
mounting
base
b3
b4
D1
L2
1
2
3
4
e
b
wA
1/2 e
X
c
A
A1 C
detail X
(A3)
q
L
yC
0
5 mm
θ
scale
8°
0°
Dimensions (mm are the original dimensions)
Unit(1)
A A1 A2 A3 b b2 b3 b4
c
c2 D(1) D1(1) E(1) E1(1) e
H
L L1
max 1.20 0.15 1.10
0.50 4.41 2.2
mm nom
0.25
min 1.01 0.00 0.95
0.35 3.62 2.0
0.9 0.25 0.30 4.10 4.20 5.0
0.7 0.19 0.24 3.80
4.8
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
3.3
6.2 0.85 1.3
1.27
3.1
5.8 0.40 0.8
Outline
version
References
IEC
JEDEC
JEITA
European
projection
SOT669
MO-235
L2 w y
1.3
0.25 0.1
0.8
sot669_po
Issue date
11-03-25
13-02-27
Fig. 14. Package outline LFPAK56; Power-SO8 (SOT669)
PHPT60410NY
Product data sheet
All information provided in this document is subject to legal disclaimers.
27 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved
10 / 15
 ▷