PHPT60410NY Datasheet, PDF (4/15 Pages) NXP Semiconductors – 40 V, 10 A NPN high power bipolar transistor

NXP Semiconductors
6
P_tot
(1)
(W)
4
(2)
PHPT60410NY
40 V, 10 A NPN high power bipolar transistor
aaa-014224
2
(3)
0
-75
25
Fig. 1.
(1) Ceramic PCB, Al₂O₃, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm²
(3) FR4 PCB, standard footprint
Power derating curves
125
225
T_amb (°C)
9. Thermal characteristics
Table 6.
Symbol
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
R_th(j-mb)
thermal resistance
from junction to
mounting base
Min Typ Max Unit
[1]
-
-
115 K/W
[2]
-
-
45
K/W
[3]
-
-
30
K/W
-
-
6
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] _{Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 6 cm}²_.
[3] Device mounted on an ceramic Printed-Circuit Board (PCB), Al₂O₃, standard footprint.
PHPT60410NY
Product data sheet
All information provided in this document is subject to legal disclaimers.
27 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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