PHPT60410NY Datasheet, PDF (7/15 Pages) NXP Semiconductors – 40 V, 10 A NPN high power bipolar transistor

NXP Semiconductors
PHPT60410NY
40 V, 10 A NPN high power bipolar transistor
600
h_FE
400
200
aaa-014213
(1)
(2)
(3)
0
10^-1
1
10
10²
10³
10⁴
I_C (mA)
V_CE = 2 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig. 4. DC current gain as a function of collector
current; typical values
1.2
V_BE
(V)
1.0
aaa-014215
0.8
1
2
0.6
3
0.4
16
I_C
(A)
12
8
aaa-014214
175
150 ₁₂₅
100
75
50
25
15
4
10
I_B = 5 mA
0
0
1
2
3
4
5
V_CE (V)
T_amb = 25 °C
Fig. 5. Collector current as a function of collector-
emitter voltage; typical values
1.4
V_BEsat
(V)
1
(1)
0.6
(2)
(3)
aaa-014216
0.2
10^-1
1
10
10²
10³
10⁴
I_C (mA)
V_CE = 2 V
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig. 6. Base-emitter voltage as a function of collector
current; typical values
0.2
10^-1
1
10
10²
10³
10⁴
I_C (mA)
I_C/I_B = 20
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig. 7. Base-emitter saturation voltage as a function of
collector current; typical values
PHPT60410NY
Product data sheet
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27 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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