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PHPT60410NY Datasheet, PDF (6/15 Pages) NXP Semiconductors – 40 V, 10 A NPN high power bipolar transistor
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NXP Semiconductors
PHPT60410NY
40 V, 10 A NPN high power bipolar transistor
Symbol
VCEsat
RCEsat
VBEsat
VBEon
td
tr
ton
ts
tf
toff
fT
Cc
Parameter
Conditions
VCE = 2 V; IC = 1 A; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
VCE = 2 V; IC = 5 A; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
VCE = 2 V; IC = 10 A; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C; pulsed
collector-emitter
saturation voltage
IC = 1 A; IB = 50 mA; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C; pulsed
IC = 5 A; IB = 500 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = 10 A; IB = 500 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
collector-emitter
saturation resistance
IC = 10 A; IB = 1 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
base-emitter saturation IC = 1 A; IB = 50 mA; pulsed;
voltage
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = 5 A; IB = 500 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
base-emitter turn-on
voltage
IC = 10 A; IB = 500 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VCE = 2 V; IC = 500 mA; Tamb = 25 °C
delay time
rise time
VCC = 12.5 V; IC = 5 A; IBon = 250 mA;
IBoff = -250 mA; Tamb = 25 °C
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance
VCE = 10 V; IC = 500 mA; f = 100 MHz;
Tamb = 25 °C
VCB = 10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
Min Typ Max Unit
220 360 -
140 230 -
55
90
-
-
35
50
mV
-
140 200 mV
-
330 460 mV
-
28
40
mΩ
-
-
0.95 V
-
-
1.2 V
-
-
1.3 V
-
-
0.8 V
-
15
-
ns
-
130 -
ns
-
145 -
ns
-
310 -
ns
-
95
-
ns
-
405 -
ns
-
128 -
MHz
-
57
-
pF
PHPT60410NY
Product data sheet
All information provided in this document is subject to legal disclaimers.
27 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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