BUK7610-100B Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7610-100B
N-channel TrenchMOS standard level FET
100
I_D
(A)
80
60
40
20
0
0
03ng74
T_j = 175 °C
T_j = 25 °C
2
4
6
V_GS (V)
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
max
typ
min
03aa32
60
120
180
T_j (°C)
Fig 9. Transfer characteristics: drain current as a
Fig 10. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values
junction temperature
13
RDSon
(mΩ)
03ng77
2.8
V_GS = 6 V
a
12
6.5
9
2.1
7
11
8
10
1.4
10
03ng41
0.7
9
8
0
50
100
150
200
I_D (A)
0
-60
0
60
120
180
T_j (°C)
Fig 11. Drain-source on-state resistance as a function Fig 12. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
BUK7610-100B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 12 April 2010
© NXP B.V. 2010. All rights reserved.
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