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| BUK7610-100B Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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NXP Semiconductors
BUK7610-100B
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
Parameter
drain-source voltage
drain-gate voltage
Conditions
Tj ⥠25 °C; Tj ⤠175 °C
RGS = 20 kâ¦
VGS
gate-source voltage
ID
drain current
Tmb = 25 °C; VGS = 10 V;
[1]
see Figure 1; see Figure 3
[2]
Tmb = 100 °C; VGS = 10 V; see Figure 1 [2]
IDM
peak drain current
Tmb = 25 °C; tp ⤠10 µs; pulsed;
see Figure 3
Ptot
total power dissipation Tmb = 25 °C; see Figure 2
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
IS
source current
Tmb = 25 °C
[1]
[2]
ISM
peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
tp ⤠10 µs; pulsed; Tmb = 25 °C
ID = 75 A; Vsup ⤠100 V; RGS = 50 â¦;
VGS = 10 V; Tj(init) = 25 °C; unclamped
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
Min Typ Max Unit
-
-
100 V
-
-
100 V
-20 -
20 V
-
-
110 A
-
-
75 A
-
-
75 A
-
-
438 A
-
-
-55 -
-55 -
300 W
175 °C
175 °C
-
-
110 A
-
-
75 A
-
-
438 A
-
-
629 mJ
BUK7610-100B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 â 12 April 2010
© NXP B.V. 2010. All rights reserved.
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