BUK7610-100B Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
120
I_D
(A)
80
03ng70
Capped at 75 A due to package
BUK7610-100B
N-channel TrenchMOS standard level FET
120
P_der
(%)
80
03na19
40
40
0
0
50
100
150
200
T_mb (°C)
0
0
50
100
150
200
T_mb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
10³
I_D
(A)
Limit R_DSon = V_DS/I_D
10²
Capped at 75 A due to package
10
DC
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
02ng68
t_p = 10 μs
100 μs
1 ms
10 ms
100 ms
1
1
10
10²
10³
V_DS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7610-100B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 12 April 2010
© NXP B.V. 2010. All rights reserved.
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