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BUK7610-100B Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
NXP Semiconductors
BUK7610-100B
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
td(on)
tr
td(off)
tf
LD
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
LS
internal source
inductance
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 10
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10
VDS = 100 V; VGS = 0 V; Tj = 25 °C
VDS = 100 V; VGS = 0 V; Tj = 175 °C
VDS = 0 V; VGS = 20 V; Tj = 25 °C
VDS = 0 V; VGS = -20 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 11; see Figure 12
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 11; see Figure 12
ID = 25 A; VDS = 80 V; VGS = 10 V;
Tj = 25 °C; see Figure 13
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 14
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 10 Ω; Tj = 25 °C
from drain lead 6 mm from package to
centre of die ; Tj = 25 °C
from upper edge of drain mounting base
to centre of die ; Tj = 25 °C
from source lead to source bond pad ;
Tj = 25 °C
IS = 40 A; VGS = 0 V; Tj = 25 °C;
see Figure 15
IS = 20 A; dIS/dt = -100 A/µs;
VGS = -10 V; VDS = 30 V; Tj = 25 °C
Min Typ Max Unit
100 -
-
V
89 -
-
V
1
-
-
V
2
3
4
V
-
-
4.4 V
-
0.02 1
µA
-
-
500 µA
-
2
100 nA
-
2
100 nA
-
8.6 10
mΩ
-
-
25
mΩ
-
80
-
nC
-
18
-
nC
-
22 -
nC
-
5080 6773 pF
-
677 812 pF
-
168 230 pF
-
33
-
ns
-
45 -
ns
-
120 -
ns
-
36 -
ns
-
4.5 -
nH
-
2.5 -
nH
-
7.5 -
nH
-
0.85 1.2 V
-
69
-
ns
-
212 -
nC
BUK7610-100B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 12 April 2010
© NXP B.V. 2010. All rights reserved.
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