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BUK7610-100B Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
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NXP Semiconductors
BUK7610-100B
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
see Figure 4
mounted on printed-circuit board ;
minimum footprint
Min Typ Max Unit
-
-
0.5 K/W
-
50
-
K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
10−1
10−2
0.2
0.1
0.05
0.02
03ng69
P
δ = tp
T
Single Shot
10−3
10−6
10−5
10−4
10−3
10−2
tp
t
T
10−1
1
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7610-100B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 12 April 2010
© NXP B.V. 2010. All rights reserved.
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