BUK7610-100B Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7610-100B
N-channel TrenchMOS standard level FET
350
I_D
(A)
300
250
200
150
100
50
0
0
20
10
8
03ng76
7
6.5
5.5
V_GS = 4.5 V
2
4
6
8
10
V_DS (V)
11
R_DSon
(mΩ)
10
9
8
7
5
03ng75
10
15
20
V_GS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
10^−1
I_D
(A)
10^−2
03aa35
min typ max
100
g_fs
(S)
80
03ng73
10^−3
60
10^−4
40
10^−5
20
10^−6
0
2
4
6
V_GS (V)
0
0
20
40
60
80
I_D (A)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
BUK7610-100B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 12 April 2010
© NXP B.V. 2010. All rights reserved.
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