BUK7226-75A Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7226-75A
N-channel TrenchMOS standard level FET
60
R_DSon
6
(mΩ) _{VGS (V) = 5}
50
40
03nb07
7
8 9 10
2.4
a
1.6
03nb25
30
0.8
20
10
0
50
T _j = 25 °C
100
150
200
I_D (A)
0
−60
0
60
a=
R _{DS o n}
R _{DS o n(25°C )}
120
180
T_j (°C)
Fig 12. Drain-source on-state resistance as a function
of drain current; typical values
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
10
V_GS
(V)
8
6
03nb02
V_DS = 14 V
V_DS = 60 V
3000
C
(pF)
2000
C_iss
03nb08
4
C_oss
1000
C_rss
2
0
0
20
T _j = 25 °C; I_D = 25 A
40
60
Q_G (nC)
0
10^−2
10^−1
1
V_GS = 0V ; f = 1 M H z
10
10²
V_DS (V)
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK7226-75A_2
Product data sheet
Rev. 02 — 22 February 2008
© NXP B.V. 2008. All rights reserved.
8 of 13