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| BUK7226-75A Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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NXP Semiconductors
BUK7226-75A
N-channel TrenchMOS standard level FET
1
δ = 0.5
Zth(j-mb)
(K/W) 0.2
0.1
10-1
0.05
0.02
003aac180
10-2
single shot
P
δ = tp
T
10-3
10-6
10-5
10-4
10-3
10-2
tp
T
10-1
tp (s)
t
1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Min
Static characteristics
V(BR)DSS
drain-source
ID = 0.25 mA; VGS = 0 V;
70
breakdown voltage Tj = -55 °C
ID = 0.25 mA; VGS = 0 V;
75
Tj = 25 °C
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS;
1
voltage
Tj = 175 °C; see Figure 11
ID = 1 mA; VDS = VGS; Tj = 25 °C;
2
see Figure 11
IDSS
IGSS
RDSon
ID = 1 mA; VDS = VGS;
-
Tj = -55 °C; see Figure 11
drain leakage current VDS = 75 V; VGS = 0 V; Tj = 25 °C
-
VDS = 75 V; VGS = 0 V;
-
Tj = 175 °C
gate leakage current VDS = 0 V; VGS = 20 V; Tj = 25 °C
-
VDS = 0 V; VGS = -20 V;
-
Tj = 25 °C
drain-source on-state VGS = 10 V; ID = 25 A;
-
resistance
Tj = 175 °C; see Figure 12 and
13
VGS = 10 V; ID = 25 A; Tj = 25 °C;
-
see Figure 12 and 13
Source-drain diode
VSD
source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C;
-
see Figure 16
BUK7226-75A_2
Product data sheet
Rev. 02 â 22 February 2008
Typ
Max
Unit
-
-
V
-
-
V
-
-
V
3
4
V
-
4.4
V
0.05
10
μA
-
500
μA
2
100
nA
2
100
nA
-
54
mΩ
22
26
mΩ
0.85
1.2
V
© NXP B.V. 2008. All rights reserved.
5 of 13
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