BUK7226-75A Datasheet, PDF (2/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7226-75A
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning
Symbol
G
D
S
D
Description
gate
drain
source
mounting base;
connected to drain
3. Ordering information
Simplified outline
mb
2
1
3
SOT428 (DPAK)
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
Description
BUK7226-75A
DPAK
plastic single-ended surface-mounted package (DPAK); 3 leads (one lead
cropped)
Version
SOT428
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Avalanche ruggedness
T_j ≥ 25 °C; T_j ≤ 175 °C
R_GS = 20 kΩ
T_mb = 25 °C; V_GS = 10 V; see Figure 1 and 4
T_mb = 100 °C; V_GS = 10 V; see Figure 1
T_mb = 25 °C; t_p ≤ 10 μs; pulsed; see Figure 4
T_mb = 25 °C; see Figure 2
E_DS(AL)S non-repetitive
drain-source avalanche
energy
I_D = 45 A; V_sup ≤ 75 V; R_GS = 50 Ω;
V_GS = 10 V; T_j(init) = 25 °C; unclamped
inductive load
E_DS(AL)R repetitive drain-source
avalanche energy
see Figure 3
Source-drain diode
I_S
source current
I_SM
peak source current
T_mb = 25 °C
t_p ≤ 10 μs; pulsed; T_mb = 25 °C
Min
-
-
-20
[1] _-
-
-
-
-55
-55
-
[2][3] _-
[4]
[1] _-
-
[1] Capped at 45 A due to bondwire.
Max
Unit
75
V
75
V
20
V
45
A
38
A
215
A
158
W
175
°C
175
°C
215
mJ
-
J
45
A
215
A
BUK7226-75A_2
Product data sheet
Rev. 02 — 22 February 2008
© NXP B.V. 2008. All rights reserved.
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