BUK7226-75A Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK7226-75A
N-channel TrenchMOS standard level FET
Rev. 02 — 22 February 2008
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP General Purpose Automotive (GPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features
„ 175 °C rated
„ Q101 compliant
„ Low on-state resistance
„ Standard level compatible
1.3 Applications
„ 12 V, 24 V and 42 V loads
„ General purpose power switching
„ Automotive systems
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
V_GS = 10 V; T_mb = 25 °C;
see Figure 1 and 4
P_tot
total power dissipation
T_j
junction temperature
Static characteristics
T_mb = 25 °C; see Figure 2
R_DSon
drain-source on-state
resistance
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C; see Figure 12 and
13
Avalanche ruggedness
E_DS(AL)S
non-repetitive
drain-source avalanche
energy
I_D = 45 A; V_sup ≤ 75 V;
R_GS = 50 Ω; V_GS = 10 V;
T_j(init) = 25 °C; unclamped
inductive load
[1] Capped at 45 A due to bondwire.
Min Typ Max Unit
-
-
75 V
[1] _-
-
45 A
-
-
-55 -
158 W
175 °C
-
22 26 mΩ
-
-
215 mJ