BUK7226-75A Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7226-75A
N-channel TrenchMOS standard level FET
10³
I_D
(A)
Limit R_DSon = V_DS / I_D
10²
(1)
10
1
10 μs
100 μs
1 ms
10 ms
DC
100 ms
003aac179
10^-1
1
10
10²
V_DS (V)
10³
T_mb = 25 °C; I_DM is single pulse
(1) Capped at 45 A due to bondwire.
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
R_th(j-a)
R_th(j-mb)
Thermal characteristics
Parameter
Conditions
thermal resistance
from junction to
ambient
minimum footprint; FR4 board
thermal resistance
from junction to
mounting base
see Figure 5
Min
Typ
Max
Unit
-
70
-
K/W
-
-
1
K/W
BUK7226-75A_2
Product data sheet
Rev. 02 — 22 February 2008
© NXP B.V. 2008. All rights reserved.
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