BUK7226-75A Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7226-75A
N-channel TrenchMOS standard level FET
10^−1
I_D
(A)
10^−2
03aa35
min typ max
10^−3
10^−4
10^−5
10^−6
0
2
T _j = 25 °C;V_DS = V_GS
4
6
V_GS (V)
40
g_fs
(S)
30
03nb03
20
10
0
0
20
40
T _j = 25 °C;V_DS = 25V
60
80
I_D (A)
Fig 8. Sub-threshold drain current as a function of
gate-source voltage
50
I_D
(A)
40
03nb04
30
20
T_j = 175 °C
10
T_j = 25 °C
0
0
2
V_DS = 25V
4
6
V_GS (V)
Fig 9. Forward transconductance as a function of
drain current; typical values
5
V_GS(th)
(V)
4
max
03aa32
3
typ
2
min
1
0
−60
0
60
I_D = 1 m A;V_DS = V_GS
120
180
T_j (°C)
Fig 10. Transfer characteristics: drain current as a
Fig 11. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values
junction temperature
BUK7226-75A_2
Product data sheet
Rev. 02 — 22 February 2008
© NXP B.V. 2008. All rights reserved.
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