BUK6510-75C Datasheet, PDF (8/16 Pages) NXP Semiconductors – N-channel TrenchMOS FET AEC Q101 compliant

NXP Semiconductors
BUK6510-75C
N-channel TrenchMOS FET
120
g_fs
(S)
100
80
60
40
20
0
0
20
40
003aae411
60
80
100
I_D (A)
120
I_D
(A)
100
003aae410
80
60
T_j = 175 °C
T_j = 25 °C
40
20
0
0
1
2
3
4
5
V_GS(V)
Fig 7. Forward transconductance as a function of
drain current; typical values
4
V_GS(th)
(V)
3
2
max
typ
min
003aad805
1
0
-60
0
60
120
180
T_j (°C)
Fig 8. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
10^-1
I_D
(A)
10^-2
10^-3
003aad806
min typ max
10^-4
10^-5
10^-6
0
1
2
3
4
V_GS (V)
Fig 9. Gate-source threshold voltage as a function of Fig 10. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
BUK6510-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 13 December 2010
© NXP B.V. 2010. All rights reserved.
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