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BUK6510-75C Datasheet, PDF (7/16 Pages) NXP Semiconductors – N-channel TrenchMOS FET AEC Q101 compliant
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NXP Semiconductors
BUK6510-75C
N-channel TrenchMOS FET
Table 6.
Symbol
QGS
QGD
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
LD
Characteristics …continued
Parameter
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
LS
internal source inductance
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
ID = 25 A; VDS = 60 V; VGS = 10 V;
see Figure 16; see Figure 17
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 20
VDS = 55 V; RL = 2.2 Ω; VGS = 10 V;
RG(ext) = 10 Ω
from drain lead 6 mm from package
to centre of die ; Tj = 25 °C
from source lead to source bond
pad ; Tj = 25 °C
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 19
IS = 20 A; dIS/dt = -100 A/µs;
VGS = 0 V; VDS = 25 V
Min Typ Max Unit
-
11
-
nC
-
30 -
nC
-
3938 5251 pF
-
310 372 pF
-
206 282 pF
-
18
-
ns
-
40 -
ns
-
165 -
ns
-
80
-
ns
-
4.5 -
nH
-
7.5 -
nH
-
0.8 1.2 V
-
50.5 -
ns
-
105 -
nC
150
ID
(A)
125
100
75
50
25
0
0
VGS(V) =106.0 5.0 4.5
003aae409
4.0
3.8
3.6
3.4
3.3
3.2
1
2
3
4
VDS(V)
50
RDSon
(mΩ)
40
003aae415
30
20
10
0
0
4
8
12
16
20
VGS(V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values.
BUK6510-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 13 December 2010
© NXP B.V. 2010. All rights reserved.
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