BUK6510-75C Datasheet, PDF (11/16 Pages) NXP Semiconductors – N-channel TrenchMOS FET AEC Q101 compliant

NXP Semiconductors
BUK6510-75C
N-channel TrenchMOS FET
200
I_S
(A)
150
003aae416
100
T_j = 175 °C
T_j = 25 °C
50
0
0
0.5
1
1.5 _VSD(V) 2
Fig 19. Source current as a function of source-drain voltage; typical values
10⁴
003aae412
C
C_iss
(pF)
10³
10²
10^-1
1
C_oss
C_rss
10
10²
V_DS(V)
Fig 20. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
BUK6510-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 13 December 2010
© NXP B.V. 2010. All rights reserved.
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