BUK6510-75C Datasheet, PDF (5/16 Pages) NXP Semiconductors – N-channel TrenchMOS FET AEC Q101 compliant

NXP Semiconductors
BUK6510-75C
N-channel TrenchMOS FET
5. Thermal characteristics
Table 5.
Symbol
R_th(j-mb)
R_th(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction to mounting see Figure 4
base
thermal resistance from junction to ambient vertical in free air
Min Typ Max Unit
-
-
0.95 K/W
-
60
-
K/W
1
Zth (K/W) _{δ = 0.5}
0.2
10^-1
0.1
0.05
0.02
10^-2
single shot
003aae407
P
δ = ^tp
T
t_p
t
T
10^-3
10^-6
10^-5
10^-4
10^-3
10^-2
10^-1
tp (s )
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK6510-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 13 December 2010
© NXP B.V. 2010. All rights reserved.
5 of 16