BUK6510-75C Datasheet, PDF (1/16 Pages) NXP Semiconductors – N-channel TrenchMOS FET AEC Q101 compliant

BUK6510-75C
N-channel TrenchMOS FET
Rev. 02 — 13 December 2010
Product data sheet
1. Product profile
1.1 General description
Standard and logic level gate drive N-channel enhancement mode Field-Effect Transistor
(FET) in a plastic package using advanced TrenchMOS technology. This product has
been designed and qualified to the appropriate AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Suitable for intermediate level gate
drive sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V Automotive systems
„ Electric and electro-hydraulic power
steering
„ Motors, lamps and solenoid control
management
„ Start-Stop micro-hybrid applications
„ Transmission control
„ Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
V_GS = 10 V; T_mb = 25 °C;
see Figure 1
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
Static characteristics
R_DSon
drain-source on-state
resistance
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C; see Figure 13
V_GS = 5 V; I_D = 15 A; T_j = 25 °C;
see Figure 14
Avalanche ruggedness
E_DS(AL)S
non-repetitive
drain-source
avalanche energy
I_D = 77 A; V_sup ≤ 75 V;
R_GS = 50 Ω; V_GS = 10 V;
T_j(init) = 25 °C; unclamped
Min Typ Max Unit
-
-
75 V
-
-
77 A
-
-
158 W
-
8.9 10.4 mΩ
-
11.1 13 mΩ
-
-
122 mJ