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| BUK6510-75C Datasheet, PDF (10/16 Pages) NXP Semiconductors – N-channel TrenchMOS FET AEC Q101 compliant | |||
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NXP Semiconductors
BUK6510-75C
N-channel TrenchMOS FET
3
a
003aad804
2.5
2
1.5
1
0.5
0
-60
0
60
120
180
Tj (°C)
10
VGS
(V)
8
6
4
003aae414
14V
VDS= 60V
2
0
0
20
40
60
80
100
QG (nC)
Fig 15. Normalized drain-source on-state resistance
factor as a function of junction temperature
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
Fig 16. Gate-source voltage as a function of gate
charge; typical values
10
VGS
(V)
15V
8
003aaf019
6
VDS= 6V
24V
4
2
0
0
10
20
30 QG (nC) 40
Fig 17. Gate charge waveform definitions
Fig 18. Gate-source voltage as a function of gate
charge; typical values
BUK6510-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 â 13 December 2010
© NXP B.V. 2010. All rights reserved.
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