BUJD103AD Datasheet, PDF (8/14 Pages) NXP Semiconductors – NPN power transistor with integrated diode

NXP Semiconductors
BUJD103AD
NPN power transistor with integrated diode
2.0
V_CEsat
(V)
I_C = 1 A 2 A 3 A 4 A
1.6
001aab995
1.2
0.8
0.4
0
10^−2
10^−1
1
10
I_B (A)
V_CEsat
(V) 0.5
0.4
0.3
0.2
0.1
0
10^−1
001aab997
1
10
I_C (A)
Fig 9. Collector-emitter saturation voltage as a
function of base current; typical values
1.4
V_BEsat
(V)
1.2
001aab996
1.0
0.8
0.6
0.4
0.2
0
10^−1
1
10
I_C (A)
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
10²
T_j = 25 °C
001aab994
h_FE
V_CE = 5 V
10
1V
1
10^−2
10^−1
1
10
I_C (A)
Fig 11. Base-emitter saturation voltage as a function of Fig 12. DC current gain as a function of collector
collector current; typical values
current; typical values
BUJD103AD_2
Product data sheet
Rev. 02 — 6 October 2009
© NXP B.V. 2009. All rights reserved.
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