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BUJD103AD Datasheet, PDF (5/14 Pages) NXP Semiconductors – NPN power transistor with integrated diode
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NXP Semiconductors
BUJD103AD
NPN power transistor with integrated diode
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from see Figure 5
junction to mounting
base
thermal resistance from printed-circuit-board mounted; minimum
junction to ambient
footprint; see Figure 6
Min Typ Max Unit
-
-
1.56 K/W
-
75
-
K/W
001aab998
10
Zth(j-mb)
(K/W)
1 δ = 0.5
10−1
0.2
0.1
0.05
0.02
0.01
Ptot
tp
δ=
T
tp
t
T
10−2
10−5
10−4
10−3
10−2
10−1
1
10
tp (s)
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse width
7.0
7.0
2.15
2.5
Fig 6. Minimum footprint SOT428
1.5
4.57
001aab021
BUJD103AD_2
Product data sheet
Rev. 02 — 6 October 2009
© NXP B.V. 2009. All rights reserved.
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