|
BUJD103AD Datasheet, PDF (1/14 Pages) NXP Semiconductors – NPN power transistor with integrated diode | |||
|
BUJD103AD
NPN power transistor with integrated diode
Rev. 02 â 6 October 2009
Product data sheet
1. Product profile
1.1 General description
High voltage, high speed, planar passivated NPN power switching transistor with
integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic
package.
1.2 Features and benefits
 Fast switching
 High voltage capability
 Integrated anti-parallel E-C diode
 Very low switching and conduction
losses
1.3 Applications
 DC-to-DC converters
 Electronic lighting ballasts
 Inverters
 Motor control systems
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
IC
collector current
Ptot
total power
dissipation
VCESM collector-emitter
peak voltage
Static characteristics
hFE
DC current gain
Conditions
see Figure 4Tmb ⤠25 °C
VBE = 0 V
IC = 500 mA; VCE = 5 V;
see Figure 12Tj = 25 °C
VCE = 5 V; IC = 3 A;
Tmb = 25 °C; see Figure 12
Min Typ Max Unit
-
-
4
A
-
-
80 W
-
-
700 V
13 22 32
-
12.5 -
|
▷ |