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BUJD103AD Datasheet, PDF (3/14 Pages) NXP Semiconductors – NPN power transistor with integrated diode
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NXP Semiconductors
BUJD103AD
NPN power transistor with integrated diode
IBon
VBB
VCC
LC
VCL(CE)
probe point
LB
DUT
001aab999
Fig 1. Test circuit for reverse bias safe operating area
10
IC
(A)
8
001aac000
6
4
2
0
0
200
400
600
800
1000
VCEclamp (V)
102
IC
(A)
ICM(ma1x0)
IC(max)
1
10−1
10−2
10−3
1
I(3)
10
Fig 2. Reverse bias safe operating area
001aac001
duty cycle = 0.01
II(3)
tp = 20 μs
(1)
50 μs
100 μs
200 μs
(2)
500 μs
DC
III(3)
102
103
VCEclamp (V)
Fig 3. Forward bias safe operating area for Tmb ≤ 25 °C
BUJD103AD_2
Product data sheet
Rev. 02 — 6 October 2009
© NXP B.V. 2009. All rights reserved.
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