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BUJD103AD Datasheet, PDF (6/14 Pages) NXP Semiconductors – NPN power transistor with integrated diode
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NXP Semiconductors
BUJD103AD
NPN power transistor with integrated diode
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Static characteristics
ICES
collector-emitter cut-off VBE = 0 V; VCE = 700 V; Tj = 25 °C
current
VBE = 0 V; VCE = 700 V; Tj = 125 °C;
VBE = 0 V; VCE = 700 V; Tj = 25 °C;
VBE = 0 V; VCE = 700 V; Tj = 100 °C
ICBO
collector-base cut-off VCB = 700 V; IE = 0 A;
current
ICEO
collector-emitter cut-off VCE = 400 V; IB = 0 A;
current
IEBO
VCEOsus
emitter-base cut-off
current
collector-emitter
sustaining voltage
VEB = 9 V; IC = 0 A
VEB = 7 V; IC = 0 A
IB = 0 A; IC = 10 mA; LC = 25 mH;
see Figure 7 and 8
VCEsat
VBEsat
VF
hFE
collector-emitter
saturation voltage
base-emitter saturation
voltage
forward voltage
DC current gain
IC = 1 A; IB = 0.2 A; see Figure 9 and 10
IC = 2 A; IB = 0.5 A; see Figure 9 and 10
IC = 3 A; IB = 0.6 A; see Figure 9 and 10
IC = 4 A; IB = 1 A; see Figure 9 and 10
IC = 1 A; IB = 0.2 A; see Figure 11
IC = 2 A; IB = 0.5 A; see Figure 11
IC = 3 A; IB = 0.6 A; see Figure 11
IF = 2 A
IC = 1 mA; VCE = 5 V; Tmb = 25 °C;
see Figure 12
IC = 500 mA; VCE = 5 V; Tj = 25 °C;
see Figure 12
IC = 1 A; VCE = 5 V; Tmb = 25 °C;
see Figure 12
IC = 2 A; VCE = 5 V; Tmb = 25 °C;
see Figure 12
IC = 3 A; VCE = 5 V; Tmb = 25 °C;
see Figure 12
Dynamic characteristics
ton
turn-on time
IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A;
RL = 75 Ω; Tj 25 °C; resistive load;
see Figure 13 and 14
Min Typ Max Unit
-
-
1
mA
[1] -
-
2
mA
[1] -
-
1
mA
-
-
5
mA
[1] -
-
1
mA
[1] -
-
0.1 mA
-
-
-
-
400 -
1
mA
10
mA
-
V
-
0.1 0.5 V
-
0.2 0.6 V
-
0.25 1
V
-
0.3 1
V
-
0.85 1.2 V
-
0.92 1.6 V
-
0.97 1.5 V
-
1.04 1.5 V
10
17
32
13
22
32
12
20
40
11
16
22
-
12.5 -
-
0.52 0.6 µs
BUJD103AD_2
Product data sheet
Rev. 02 — 6 October 2009
© NXP B.V. 2009. All rights reserved.
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