BUJD103AD Datasheet, PDF (2/14 Pages) NXP Semiconductors – NPN power transistor with integrated diode

NXP Semiconductors
BUJD103AD
NPN power transistor with integrated diode
2. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
B
base
2
C
collector
3
E
emitter
Simplified outline
[1]
mb
Graphic symbol
C
B
2
1
3
SOT428
(DPAK)
[1] it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package
3. Ordering information
E
sym131
Table 3. Ordering information
Type number
Package
Name
Description
BUJD103AD
DPAK
plastic single-ended surface-mounted package (DPAK); 3 leads (one
lead cropped)
4. Limiting values
Version
SOT428
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_CESM
collector-emitter peak V_BE = 0 V
voltage
V_CBO
V_CEO
collector-base voltage
collector-emitter
voltage
I_E = 0 A
I_B = 0 A
I_C
collector current
I_CM
peak collector current see Figure 1, 2 and 3
I_B
base current
I_BM
peak base current
P_tot
total power dissipation T_mb ≤ 25 °C; see Figure 4
T_stg
storage temperature
T_j
junction temperature
Min Max Unit
-
700 V
-
700 V
-
400 V
-
4
A
-
8
A
-
2
A
-
4
A
-
80
W
-65 150 °C
-
150 °C
BUJD103AD_2
Product data sheet
Rev. 02 — 6 October 2009
© NXP B.V. 2009. All rights reserved.
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