PSMN059-150Y Datasheet, PDF (7/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
PSMN059-150Y
N-channel TrenchMOS standard level FET
5
V_GS(th)
(V)
4
3
2
1
003aab852
max
typ
min
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
003aab853
min typ max
0
−60
0
60
120
160
T_j (°C)
I_D = 1 mA; V_DS = V_GS
Fig 9. Gate-source threshold voltage as a function of
junction temperature
10^−6
0
2
4
6
V_GS (V)
T_j = 25 °C; V_DS = 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
10
V_GS
(V)
8
I_D = 12 A
T_j = 25 °C
6
30
75
4
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V_DS = 120 V
2
0
0
7.5
15
22.5
30
Q_G (nC)
I_D = 12 A; V_DS = 30, 75 and 120 V
Fig 11. Gate-source voltage as a function of gate
charge; typical values
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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Fig 12. Gate charge waveform definitions
PSMN059_150Y_1
Product data sheet
Rev. 01 — 5 May 2008
© NXP B.V. 2008. All rights reserved.
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