PSMN059-150Y Datasheet, PDF (5/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
PSMN059-150Y
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5. Characteristics
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Static characteristics
V_(BR)DSS drain-source breakdown
voltage
V_GS(th) gate-source threshold voltage
I_DSS
drain leakage current
I_GSS
R_G
R_DSon
gate leakage current
gate resistance
drain-source on-state
resistance
Dynamic characteristics
Q_G(tot) total gate charge
Q_GS
gate-source charge
Q_GD
gate-drain charge
V_GS(pl) gate-source plateau voltage
C_iss
input capacitance
C_oss
output capacitance
C_rss
reverse transfer capacitance
t_d(on)
turn-on delay time
t_r
rise time
t_d(off)
turn-off delay time
t_f
fall time
Source-drain diode
V_SD
source-drain voltage
t_rr
reverse recovery time
Q_r
recovered charge
Conditions
I_D = 250 µA; V_GS = 0 V
T_j = 25 °C
T_j = −55 °C
I_D = 1 mA; V_DS = V_GS; see Figure 9 and 10
T_j = 25 °C
T_j = 150 °C
T_j = −55 °C
V_DS = 120 V; V_GS = 0 V
T_j = 25 °C
T_j = 150 °C
V_GS = ±20 V; V_DS = 0 V
f = 1 MHz
V_GS = 10 V; I_D = 12 A; see Figure 6 and 8
T_j = 25 °C
T_j = 150 °C
I_D = 12 A; V_DS = 75 V; V_GS = 10 V;
see Figure 11 and 12
V_GS = 0 V; V_DS = 30 V; f = 1 MHz;
see Figure 14
V_DS = 75 V; R_L = 3 Ω; V_GS = 10 V; R_G = 5.6 Ω
I_S = 12 A; V_GS = 0 V; see Figure 13
I_S = 12 A; dI_S/dt = −100 A/µs; V_GS = 0 V
Min Typ Max Unit
150 -
-
V
133 -
-
V
2
3
4
V
1
-
-
V
-
-
4.4 V
-
-
1
µA
-
-
100 µA
-
-
100 nA
-
1.1 -
Ω
-
46 59 mΩ
-
101 135 mΩ
-
27.9 -
nC
-
6.3 -
nC
-
9.1 -
nC
-
4.8 -
V
-
1529 -
pF
-
208 -
pF
-
66 -
pF
-
14.2 -
ns
-
42 -
ns
-
54.2 -
ns
-
11.1 -
ns
-
0.9 1.2 V
-
114 -
ns
-
175 -
nC
PSMN059_150Y_1
Product data sheet
Rev. 01 — 5 May 2008
© NXP B.V. 2008. All rights reserved.
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