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PSMN059-150Y Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
PSMN059-150Y
N-channel TrenchMOS standard level FET
Rev. 01 — 5 May 2008
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
1.2 Features
I Low body Qr
1.3 Applications
I Industrial DC motor control
I DC-to-DC converters
I Fast switching
I Class D audio
I Switched-mode power supplies
1.4 Quick reference data
I VDS ≤ 150 V
I RDSon ≤ 59 mΩ
I ID ≤ 43 A
I QGD = 9.1 nC (typ)
2. Pinning information
Table 1.
Pin
1, 2, 3
4
mb
Pinning
Description
source (S)
gate (G)
mounting base; connected to drain
(D)
Simplified outline
mb
1234
Symbol
D
G
mbb076 S