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PSMN059-150Y Datasheet, PDF (4/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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NXP Semiconductors
PSMN059-150Y
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 4. Thermal characteristics
Symbol Parameter
Conditions
Rth(j-mb) thermal resistance from junction to mounting base see Figure 4
[1] Mounted on a printed-circuit board; vertical in still air.
Min Typ Max Unit
[1] -
-
1.1 K/W
10
Zth(j-mb)
(K/W)
1
d = 0.5
10â1
0.2
0.1
0.05
0.02
10â2
single shot
10â3
10â6
10â5
10â4
10â3
10â2
003aac268
P
tp
δ=
T
tp
t
T
10â1
1
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN059_150Y_1
Product data sheet
Rev. 01 â 5 May 2008
© NXP B.V. 2008. All rights reserved.
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