PSMN059-150Y Datasheet, PDF (3/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
120
P_der
(%)
80
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PSMN059-150Y
N-channel TrenchMOS standard level FET
120
I_der
(%)
80
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40
40
0
0
50
100
150
200
T_mb (°C)
P_der = _P----_t--_o--^P-_t-₍--^t2-^o--₅-^t-_°---_C---₎ × 100 %
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
10³
I_D
(A)
10²
Limit R_DSon = V_DS / I_D
10
1
0
0
50
100
150
200
T_mb (°C)
I_der = -_I--_D----₍-^I-₂-^D-₅---_°--_C---₎ × 100 %
Fig 2. Normalized continuous drain current as a
function of mounting base temperature
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t_p = 10 µs
100 µs
1 ms
DC
10 ms
100 ms
10^−1
1
10
10²
10³
V_DS (V)
T_mb = 25 °C; I_DM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN059_150Y_1
Product data sheet
Rev. 01 — 5 May 2008
© NXP B.V. 2008. All rights reserved.
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