PSMN059-150Y Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
PSMN059-150Y
N-channel TrenchMOS standard level FET
50
I_D
(A)
40
003aab751
10 7 6
150
R_DSon ^4.5
5
(mΩ)
120
003aab752
5.5
30
V_GS (V) = 5.5
90
20
60
V_GS (V) = 6
7
10
5
10
30
4.5
0
0
1
2
3
4
5
V_DS (V)
0
0
10
20
30
40
50
I_D (A)
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
T_j = 25 °C
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
60
I_D
(A)
V_DS > I_D × R_DSon
45
003aab753
3
a
2
03al51
30
T_j = 150 °C
25 °C
1
15
0
0
2
4
6
8
V_GS (V)
T_j = 25 °C and 150 °C; V_DS > I_D × R_DSon
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0
−75
−25
25
75
125
175
T_j (°C)
a = -_R---_D----^R_S---_o-^D--_n--^S₍--_2o--₅-ⁿ--_°--_C----₎
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
PSMN059_150Y_1
Product data sheet
Rev. 01 — 5 May 2008
© NXP B.V. 2008. All rights reserved.
6 of 12