PHT4NQ10LT-135 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

NXP Semiconductors
PHT4NQ10LT
N-channel TrenchMOS logic level FET
10
V_GS
(V)
I_D = 3.5 A
T_j = 25 °C
8
03ac91
6
V_DS = 20 V
4
V_DS = 80 V
2
0
0
2
4
6
8 10 12 14
Q_G (nC)
10
I_S
(A)
8
V_GS = 0 V
03ac89
6
4
150 °C
T_j = 25 °C
2
0
0
0.4
0.8
1.2
V_SD (V)
Fig 12. Gate-source voltage as a function of gate
charge; typical values
Fig 13. Source current as a function of source-drain
voltage; typical values
PHT4NQ10LT
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 28 October 2011
© NXP B.V. 2011. All rights reserved.
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